PH10 TECHNOLOGY The UMS 0.1μm GaAs Very High Frequency pHEMT Process
●PH10 process is optimised for low noise amplification up to 110GHz with a typical Ft of 130GHz, a power density above 300mW/mm at 3V and a typical noise figure of 2.3dB @ 70GHz. It includes two metal interconnect layers, precision TaN resistors, high values TiWSi resistors, MIM capacitors, air-bridges, via-holes and gold plated back side. PH10 is a space evaluated technology.
●PH10 is available with BCB encapsulation.
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2018/03/30 |
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886 KB |
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