905 nm ns Pulsed Multi-junction Laser Diode Chip in TO-can Metal Package PACKAGED LIDAR LASER DIODE Optoelectronic Devices
●FEATURES
■Up to 100 W peak power (1E emission configuration)
■Short pulse operation up to 100 ns, 0.1% duty cycle
■905 nm wavelength emission
■Highly reliable triple-junction epitaxial structure
■Emitting area of 200 μm x 10 μm
■Chip cavity length of 600 μm
■RoHS compliant
Pulsed Multi-junction Laser Diode Chip 、 PACKAGED LIDAR LASER DIODE 、 Optoelectronic Devices 、 edge emitting laser diode |
|
[ Industrial ][ Consumer LIDAR applications ][ consumer ][ Surveillance and safety ][ Automotive applications ][ next generation LiDAR applications ] |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
TO-56;TO |
|
English Chinese Chinese and English Japanese |
|
2023/6/6 |
|
|
|
|
|
401 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.