BSC320N20NS3 G OptiMOS™3 Power-Transistor
●Features
■N-channel, normal level
■Excellent gate charge x RDS(on) product (FOM)
■Very low on-resistance RDS(on)
■Pb-free lead plating; RoHS compliant
■Qualified according to JEDEC for target application
■Halogen-free according to IEC61249-2-21
■Ideal for high-frequency switching and synchronous rectification
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Datasheet |
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Please see the document for details |
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PG-TDSON-8 |
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English Chinese Chinese and English Japanese |
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2011-05-20 |
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Rev. 2.3 |
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498 KB |
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