CHA3801-FAB L-Band Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package
■The CHA3801-FAB is an L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included to allow high input power survivability.
■It is designed for a wide range of applications, from space, military to commercial communication systems.
■The circuit is manufactured with a pHEMT process, 0.25μm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
■It is supplied in RoHS compliant SMD package.
●Main Features
■L-Band performances: 1-2GHz
■1.5dB Noise Figure
■28dB Linear Gain
■17dBm Saturated Output Power
■27dBm Output Third Order Intercept
■DC bias: Vd = 5Volt @ 70mA
■6x6mm² hermetic metal ceramic package
■MSL3
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L-Band Low Noise Amplifier 、 GaAs Monolithic Microwave IC 、 L-Band LNA monolithic circuit |
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[ space ][ military ][ commercial communication systems ] |
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Datasheet |
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Please see the document for details |
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SMD |
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English Chinese Chinese and English Japanese |
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27 Oct 20 |
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DSCHA3801-FAB0301 |
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1.4 MB |
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