LNL10R660W6 Lonten N-channel 100V, 4.3A, 66mΩ Power MOSFET
■These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
●Features
■100V，4.3A，RDS(ON).max=66mΩ@VGS=10V
■Improved dv/dt capability
■Fast switching
■Green device available
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N-channel 100V, 4.3A, 66mΩ Power MOSFET 、 N-Channel enhancement mode power field effect transistors 、 N-Channel MOSFET |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2019/2/28 |
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Version 0.1 |
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1.1 MB |
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