LSGN04R013WE Lonten N-channel 40V, 160A, 1.35mΩ Power MOSFET
●These N-Channel enhancement mode power field effect transistors are using shielded gate trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications
■Features:
●40V,160A,RDS(on).max=1.35mΩ@VGS = 10V
●Improved dv/dt capability
●Fast switching
●100% EAS Guaranteed
●Green device available
|
N-channel 40V, 160A, 1.35mΩ Power MOSFET 、 N-Channel enhancement mode power field effect transistors |
|
|
[ DC-DC Converter ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
DFN5×6 |
|
|
English Chinese Chinese and English Japanese |
|
|
2021-10-15 |
|
|
Rev 0.1 |
|
|
|
|
|
2.6 MB |
- +1 Like
- Add to Favorites
Recommend
- The Differences between MOS Tube and IGBT Tube
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- MOS Switch Tube Selection and Principle Application
- What is the Difference between MOS tube and IGBT?
- Understand the N and P MOS Operation of MOSFETs
- SOT-23 P-channel MOS BSS84 : Cost Effective Solutions for Low-voltage Applications Requiring a Low-current High-side Switch
- Miller Effect on MOS Tube Switches
- MOS Tube Drive Circuit Summary - Detailed Design of Various Switching Power Supply MOS Tube Drive Circuit
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
