LSGN04R013WE Lonten N-channel 40V, 160A, 1.35mΩ Power MOSFET
●These N-Channel enhancement mode power field effect transistors are using shielded gate trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications
■Features:
●40V,160A,RDS(on).max=1.35mΩ@VGS = 10V
●Improved dv/dt capability
●Fast switching
●100% EAS Guaranteed
●Green device available
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N-channel 40V, 160A, 1.35mΩ Power MOSFET 、 N-Channel enhancement mode power field effect transistors |
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[ DC-DC Converter ] |
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Datasheet |
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Please see the document for details |
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DFN5×6 |
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English Chinese Chinese and English Japanese |
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2021-10-15 |
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Rev 0.1 |
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2.6 MB |
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