LSGN10R047 Lonten N-channel 100V, 100A, 4.75mΩ Power MOSFET
▲These N-Channel enhancement mode power field effect transistors are using shielded gate trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
■Features
▲100V,100A,R-DS(on).max=4.75mΩ@V-GS = 10V
▲Improved dv/dt capability
▲Fast switching
▲100% EAS Guaranteed
▲Green device available
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Power MOSFET 、 N-Channel enhancement mode power field effect transistors 、 N-Channel MOSFET |
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[ DC-DC Converter ] |
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Datasheet |
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Please see the document for details |
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DFN5×6 |
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English Chinese Chinese and English Japanese |
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2023-02-09 |
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Rev 1.0 |
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922 KB |
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