Understanding PANJIT Medium Voltage and Super Junction MOSFET Datasheet Parameters
2023-06-08
●Introduction:
■Power MOSFETs are widely used as switches in various high efficiency power converter applications for its low switching and conduction losses. During design process, engineers use device datasheet provided by manufacturer to understand the device characteristic and make decision of the device suitability for the circuit. Despite of the crucial role of a datasheet, engineers often have misconceptions on datasheet parameters. This application note is aimed to help engineers to understand datasheet parameters, how they were obtained, and how to correlate it to circuit performance.
■In PANJIT, we have developed MOSFET technologies for medium voltage (MV-MOSFET) range (60V, 80V, and 100V) and super junction (SJ-MOSFET) range (600V and 650V). In the next sections, we present our MV-MOSFET and SJ-MOSFET lineup followed with the explanation on datasheet parameters and how they were obtained. For some specific parameters with big discrepancy between MV- and SJ-MOSFETs, further explanation is provided.
●Conclusions
■The MOSFET datasheet parameters has been explained in detail. The definition of the parameters, the measurement circuit, and its use for circuit design has been presented.
■Nevertheless, different manufacturer has their own different definition, measurement circuit, calculation method, limit/criteria for their datasheet. Thus this application note should only be used as a general information to help understand the device characteristic.
■Power MOSFETs are widely used as switches in various high efficiency power converter applications for its low switching and conduction losses. During design process, engineers use device datasheet provided by manufacturer to understand the device characteristic and make decision of the device suitability for the circuit. Despite of the crucial role of a datasheet, engineers often have misconceptions on datasheet parameters. This application note is aimed to help engineers to understand datasheet parameters, how they were obtained, and how to correlate it to circuit performance.
■In PANJIT, we have developed MOSFET technologies for medium voltage (MV-MOSFET) range (60V, 80V, and 100V) and super junction (SJ-MOSFET) range (600V and 650V). In the next sections, we present our MV-MOSFET and SJ-MOSFET lineup followed with the explanation on datasheet parameters and how they were obtained. For some specific parameters with big discrepancy between MV- and SJ-MOSFETs, further explanation is provided.
●Conclusions
■The MOSFET datasheet parameters has been explained in detail. The definition of the parameters, the measurement circuit, and its use for circuit design has been presented.
■Nevertheless, different manufacturer has their own different definition, measurement circuit, calculation method, limit/criteria for their datasheet. Thus this application note should only be used as a general information to help understand the device characteristic.
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