Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model
●Features
■Double pulse test circuit (High-side switching)
■4th generation SiC MOSFET SCT4018KE + gate driver IC BM61S41RFV-C.
■Device equivalent circuit model of the components are used for simulation accuracy.
■Parasitic inductors of PCB patterns are modelled and applied to the simulation circuit.
■Vgs, VDC, snubber circuit constants, etc. can be modified.
■Approx. simulation elapsed time is 2min30s.
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Schematics |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022. Sep |
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Rev.001 |
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65UG040E |
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1.2 MB |
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