HM18P10K P-Channel Enhancement Mode Power MOSFET
■The HM18P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
●General Features
■VDS =-100V,ID =-18A; RDS(ON) <100mΩ @ VGS =-10V (Typ:85mΩ)
■Super high dense cell design
■Advanced trench process technology
■Reliable and rugged
■High density cell design for ultra low On-Resistance
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[ Power management ][ notebook computer ][ Portable equipment ][ battery powered systems ] |
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Datasheet |
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Please see the document for details |
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TO-252;TO-252-2L |
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English Chinese Chinese and English Japanese |
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2022/11/8 |
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582 KB |
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