HM18P10K P-Channel Enhancement Mode Power MOSFET

PublishTime：2021-07-07

●Description: The HM18P10K uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
●General Features:
■V-DS=-100V,I-D=-18A
■R-DS(ON)<100mΩ @ V-GS=-10V (Typ:85mΩ)
■Super high dense cell design
■Advanced trench process technology
■Reliable and rugged
■High density cell design for ultra low On-Resistance

Brand of Product：	H&M SEMI
Part#：	HM18P10K More Part#
Product Category：	P-Channel Enhancement Mode Power MOSFET More
Application：	[ Power management in notebook computer ][ Portable equipment ][ battery powered systems ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-252;TO-252-2L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/03/01
Version Number：
Data Encoding：
Data Size：	460 KB

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