HM18P10 P-Channel Enhancement Mode Power MOSFET
●The HM18P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
■General Features
● VDS=-100V，I-D =-18A
♦RDS(ON)<100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
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[ Power management in notebook computer ][ Portable equipmentand battery powered systems ] |
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Datasheet |
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Please see the document for details |
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TO-220-3L |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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514 KB |
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