2N7002KT N-Channel Enhancement Mode Field Effect Transistor
■VDS: 60V
■ID: 100mA
■RDS(ON)( at VGS=10V):＜8.0 Ω
■RDS(ON)( at VGS=4.5V):＜13.0 Ω
■ESD Protected Up to 2.0KV (HBM)
●General Description
■Trench Power LV MOSFET technology
■High Power and current handing capability
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Datasheet |
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Please see the document for details |
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SOT-523 |
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English Chinese Chinese and English Japanese |
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2022/1/11 |
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1.5 MB |
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