ST18N10D N Channel Enhancement Mode MOSFET

PublishTime：2022-10-14

●ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.
●Features:
■100V/12.0A, RDS(ON) = 90mΩ(Typ.)@VGS= 10V
■100V/8.0A, RDS(ON) = 100mΩ@VGS= 4.0V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■TO-252 Package design

Brand of Product：	Stanson
Part#：	ST18N10D More Part#
Product Category：	N Channel Enhancement Mode MOSFET 、 N-Channel logic enhancement mode power field effect transistor More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-252;TO-252-2L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2015/5/27
Version Number：	V1
Data Encoding：
Data Size：	613 KB

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