18N10 N-Channel Enhancement Mode Power MOSFET

PublishTime：2024-07-05

●Description
■The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS 100V
■ID (at VGS = 10V) 35A
■RDS(ON) (at VGS = 10V) < 53mΩ
■RDS(ON) (at VGS = 4.5V) < 63mΩ
■100% Avalanche Tested
■RoHS Compliant

Brand of Product：	GOFORD
Part#：	18N10 More Part#
Product Category：	N-Channel Enhancement Mode Power MOSFET More
Application：	[ Power switch ][ DC/DC converters ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-252
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2023/8/25
Version Number：	V1.1
Data Encoding：
Data Size：	761 KB

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