ROHM Solution Simulator Schematic Information Double Pulse Test Simulation with P05SCT4018KR-EVK-001 Simulation Model

2022-09-27
●This double pulse test simulation circuit is based on the circuit configuration of ROHM's "4th Generation SiC MOSFET Half Bridge Evaluation Board" P05SCT4018KR-EVK-001 and reflects the parasitic components of the PCB wiring pattern based on electromagnetic field analysis. By modeling the EVK implementation and reflecting it in the simulation, it is now possible to accurately simulate the switching waveforms of the actual device.
●Features
■Double pulse test circuit (High-side switching)
■4th generation SiC MOSFET SCT4018KR + gate driver IC BM61S41RFV-C.
■Device equivalent circuit model of the components are used for simulation accuracy.
■Parasitic inductors of PCB patterns are modelled and applied to the simulation circuit.
■Vgs, VDC, snubber circuit constants, etc. can be modified.
■Approx. simulation elapsed time is 2min30s.

ROHM

P05SCT4018KR-EVK-001

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Part#

double pulse test simulation circuitSiC MOSFET Half Bridge Evaluation Board

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Schematics

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Please see the document for details

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English Chinese Chinese and English Japanese

2022. Feb

Rev.001

64UG137E

1.5 MB

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