CPC3960 600V N-Channel Depletion-Mode FET
●The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture.
●As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the CPC3960 ideal for use in high-power applications.
●The CPC3960 is a highly reliable FET device that has been used extensively in IXYS Integrated Circuits Division’s Solid State Relays for industrial and telecommunications applications.
●The CPC3960 is available in the SOT-223 package.
■Features
●High Breakdown Voltage: 600V
●On-Resistance: 44Ω max. at 25ºC
●Low Vɢs₍off₎ Voltage: -1.4 to -3.1V
●High Input Impedance
N-Channel Depletion-Mode FET 、 N-channel, depletion-mode, Field Effect Transistor (FET) 、 highly reliable FET device |
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[ Current Regulator ][ Normally-On Switches ][ Solid State Relays ][ Converters ][ Telecommunications ][ Power Supply ] |
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Datasheet |
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Please see the document for details |
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SOT-223 |
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English Chinese Chinese and English Japanese |
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4/10/2015 |
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R02 |
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DS-CPC3960-R02 |
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298 KB |
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