CPC3714 350V N-Channel Depletion-Mode FET
●The CPC3714 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3714 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications.
●This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3714 offers a low, 14Ω maximum, on-state resistance at 25ºC.
●The CPC3714 has a minimum breakdown voltage of 350VP and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
■Features
●Offers Low Rᴅs₍ₒₙ₎ at Cold Temperatures
●Rᴅs₍ₒₙ₎14Ω max. at 25ºC
●High Input Impedance
●High Breakdown Voltage: 350V
●Low Vɢs₍off₎ Voltage: -1.6 to -3.9V
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N-Channel Depletion-Mode FET 、 N-channel, depletion-mode, field effect transistor (FET) 、 highly reliable FET device |
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[ Ignition Modules ][ Normally-On Switches ][ Solid State Relays ][ Converters ][ Telecommunications ][ Power Supply ] |
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Datasheet |
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Please see the document for details |
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SOT-89 |
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English Chinese Chinese and English Japanese |
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8/1/2014 |
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R02 |
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DS-CPC3714-R02 |
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297 KB |
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