HD50N06 / HU50N06 60V N-Channel MOSFET
■Originative New Design
■Superior Avalanche Rugged Technology
■Robust Gate Oxide Technology
■Very Low Intrinsic Capacitances
■Excellent Switching Characteristics
■Unrivalled Gate Charge : 40 nC (Typ.)
■Extended Safe Operating Area
■Lower RDS(ON) : 0.012 Ω (Typ.) @VGS=10V
■100% Avalanche Tested
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Datasheet |
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Please see the document for details |
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TO-252;TO-251 |
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English Chinese Chinese and English Japanese |
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Nov 2019 |
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2 MB |
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