HD830U / HU830U 550V N-Channel MOSFET

2022-08-10
●Features:
■Originative New Design
■Superior Avalanche Rugged Technology
■Robust Gate Oxide Technology
■Very Low Intrinsic Capacitances
■Excellent Switching Characteristics
■Unrivalled Gate Charge : 15.5 nC (Typ.)
■Extended Safe Operating Area
■Lower RDS(ON) : 1.1 0Ω (Typ.) @VGS=10V
■100% Avalanche Tested

Haolin Electronics

HD830UHU830U

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Part#

N-Channel MOSFET

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Datasheet

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Please see the document for details

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TO-252;TO-251

English Chinese Chinese and English Japanese

June 2014

3.1 MB

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