HD5N65 / HU5N65 650V N-Channel MOSFET

2022-08-10
●Features:
■Originative New Design
■Superior Avalanche Rugged Technology
■Robust Gate Oxide Technology
■Very Low Intrinsic Capacitances
■Excellent Switching Characteristics
■Unrivalled Gate Charge : 10.5 nC (Typ.)
■Extended Safe Operating Area
■Lower RDS(ON) : 2.1Ω (Typ.) @VGS=10V
■100% Avalanche Tested

Haolin Electronics

HD5N65HU5N65

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Part#

N-Channel MOSFET

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Datasheet

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Please see the document for details

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D²-PAK;I²-PAK

English Chinese Chinese and English Japanese

Nov 2019

1.2 MB

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