GSFP6886 65V Dual N-Channel MOSFET
●The GSFP6886 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.
■Features and Benefits:
●Advanced MOSFET process technology
●Ideal for high efficiency switched mode power supplies
●Low on-resistance with low gate charge
●Fast switching and reverse body recovery
Datasheet |
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Please see the document for details |
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PPAK5X6 |
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English Chinese Chinese and English Japanese |
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May.2021 |
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USGSFP6886xSP2.1 |
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812 KB |
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