SC1265,SC1265F,SC1265D2,SC1265M2 SILICON CARBIDE SCHOTTKY DIODE Data Sheet
■SiC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency,and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over_voltage conditions.
●Features
■Max Junction Temperature 175°C
■High Surge Current Capacity
■Positive Temperature Coefficient
■Ease of Paralleling
■No Reverse Recovery/No Forward Recovery
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Datasheet |
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Please see the document for details |
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TO-220AC;ITO-220AC;TO-252AC;TO-263AC |
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English Chinese Chinese and English Japanese |
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2019/7/26 |
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575 KB |
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