FCP4N60 600V N-Channel MOSFET
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
●Features
■650V @T-J = 150°C
■ Typ. R-DS(on) = 1.0Ω
■ Ultra low gate charge (typ. Q-g = 12.8nC)
■Low effective output capacitance (typ. C-oss.eff = 32pF)
■100% avalanche tested
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2007/4/20 |
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957 KB |
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