FCP4N60 N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
● Features
■ 650 V @ TJ = 150 °C
■ Typ. RDS(on) = 1.0 Ω
■ Ultra Low Gate Charge (Typ. Qg = 12.8 nC)
■ Low Effective Output Capacitance (Typ. Coss(eff.) =32 pF)
■ 100% Avalanche Tested
■ RoHS Compliant
[ LCD / LED / PDP TV and Monitor Lighting ][ Solar Inverter ][ AC-DC Power Supply ] |
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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December 2013 |
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Rev. C1 |
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1.2 MB |
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