SSP4N60B/SSS4N60B 600V N-Channel MOSFET
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
●Features
■4.0A, 600V, R-DS(on) = 2.5Ω @V-GS = 10 V
■Low gate charge ( typical 22 nC)
■Low Crss ( typical 14 pF)
■Fast switching
■100% avalanche tested
■ Improved dv/dt capability
■ TO-220F package isolation = 4.0kV (Note 6)
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SSP Series 、 SSP 、 SSS Series 、 SSS 、 SSP4N60B 、 SSS4N60B |
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N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors |
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Datasheet |
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Please see the document for details |
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TO-220;TO-220F |
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English Chinese Chinese and English Japanese |
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2002/6/13 |
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977 KB |
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