FQD4P25 / FQU4P25 250V P-Channel MOSFET
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
●Features
■ -3.1A, -250V, R-DS(on) = 2.1Ω @V-GS = -10 V
■ Low gate charge ( typical 10 nC)
■Low Crss ( typical 10.3 pF)
■Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability
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FQD Series 、 FQD 、 FQU Series 、 FQU 、 FQD4P25 、 FQU4P25 |
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P-Channel MOSFET 、 P-Channel enhancement mode power field effect transistors |
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Datasheet |
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Please see the document for details |
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D-PAK;I-PAK |
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English Chinese Chinese and English Japanese |
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2001/8/15 |
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623 KB |
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