FQD3N60 / FQU3N60 600V N-Channel MOSFET
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
●Features
■ 2.4A, 600V, R-DS(on) = 3.6Ω @V-GS = 10 V
■ Low gate charge ( typical 10 nC)
■ Low Crss ( typical 5.5 pF)
■ Fast switching
■ 100% avalanche tested
■Improved dv/dt capability
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FQD Series 、 FQD 、 FQU Series 、 FQU 、 FQD3N60 、 FQU3N60 |
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N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors |
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Datasheet |
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Please see the document for details |
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D-PAK;I-PAK |
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English Chinese Chinese and English Japanese |
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2000/6/17 |
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618 KB |
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