FQD5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5Ω
●This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
■Features
●2.8 A,600 V, RDS(on)= 2.5Ω(Max) @VGS= 10 V,ID= 1.4 A
●Low Gate Charge (Typ.15 nC)
●Low Crss (Typ.6.5 pF)
●100% Avalanche Tested
●RoHS compliant
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FQD5N60C 、 FQU5N60C 、 FQD Series 、 FQU Series |
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[ switched mode power supplies ][ electronic lamp ballasts ] |
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Datasheet |
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Please see the document for details |
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D-PAK;I-PAK |
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English Chinese Chinese and English Japanese |
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2019/4/23 |
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453 KB |
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