FQD5N60C / FQU5N60C 600V N-Channel MOSFET

PublishTime：2022-07-10

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
●Features
■2.8A, 600V, R-DS(on) = 2.5Ω @V-GS = 10 V
■ Low gate charge ( typical 15 nC)
■ Low Crss ( typical 6.5 pF)
■ Fast switching
■ 100% avalanche tested
■ Improved dv/dt capability

Brand of Product：	YiXin
Part#：	FQD Series 、 FQD 、 FQU Series 、 FQU 、 FQD5N60C 、 FQU5N60C More Part#
Product Category：	N-Channel MOSFET 、 N-Channel enhancement mode power field effect transistors More
Application：	[ high efficiency switched mode power supplies ][ electronic lamp ballasts ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	D-PAK;I-PAK
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2003/10/31
Version Number：
Data Encoding：
Data Size：	661 KB

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