ISL73040SEH Total Dose Testing
●Introduction
■This report documents the results of low dose rate total dose testing and subsequent high temperature biased annealing of the ISL73040SEH GaN FET driver. The tests were conducted to provide an assessment of the total dose hardness of the part and to provide an estimate of bias or anneal sensitivity. Parts were irradiated under bias and with all pins grounded at low dose rate. The ISL73040SEH is rated at 75krad(Si) at 0.01rad(Si)/s and is acceptance tested on a wafer-by-wafer basis to its SMD limits.
●Product Description
■The ISL73040SEH is a low-side driver designed to drive enhancement mode Gallium Nitride (eGaN) power FET devices. The part operates over a supply voltage range from 4.5V to 13.2V and offers both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drive with a single device. The ISL73040SEH supplies 4.5V gate drive voltage (VDRV) that is generated using an internal regulator, which prevents the driven device's gate voltage exceeding its maximum gate-source rating. The gate drive voltage also features Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The inputs of the ISL73040SEH canwithstand voltages up to 14.7V. The split outputs of the ISL73040SEH offer the flexibility to adjust the turn-on and turn-off speed independently by adding impedance in the turn-on and turn-off paths.
■The ISL73040SEH operates across the -55°C to +125°C temperature range and is offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or in die form. The part is implemented in the Renesas P6 power management and mixed signal process, a junction-isolated 5V BiCMOS flow with added high voltage DMOS devices. The fabrication process is QML certified and is in volume commercial production.
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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Jan 15, 2018 |
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Rev.0.00 |
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TR061 |
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590 KB |
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