ISL73040SEHEV4Z Evaluation Board User’s Manual

2019-11-18
The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEHlow side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.

Renesas

ISL73040SEHEV4ZISL73040SEHISL73024SEHISL71610MC1812F475K5RAC7800G311P838-A-FX475K1R1C1206C225K3RACTUG311P838-A-DX225K1R1C0402C473K3RACAUTOG311P829-A-AX473K1N1C0402C104K4RALTUG311P829-A-AX104K1N1C1210C104KBRACAUTOC1210T104KARAL080508051A101GAT2ASR0805NP0101G3NT91812PC474KAT2AC1812T474KARAL08051A561GAT2ASR0805NP0561G3NT91N5617USJANS1N5617US1N6640USJANS1N6640575-84578TSW-103-07-F-SXAL1510-223AE612PNB223MSZISL73024SEHLMCS04020Z0000ZE000M32159B11TCRCW0805619RFKEAM55342K06B619DSCRCW0805140RFKEAM55342K06B140DSCRCW1206150RFKEAD55342K07B150DSCRCW120611R0FKEAD55342K07B11D0SCRCW12061M00FKEAD55342K07B1F00SISL73040SEHLISL73040SEHL/PROTO

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Evaluation Board

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User's Guide

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English Chinese Chinese and English Japanese

Feb 2019

Rev.1.00

UG186

1.3 MB

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