2SK3458 MOS Field Effect Transistor
■Low gate charge
◆Q-G = 25 nC TYP. (V-DD = 450 V, V-GS = 10 V, I-D = 6.0 A)
■Gate voltage rating ±30 V
■Low on-state resistance
◆R-DS(on) = 2.2Ω MAX. (V-GS= 10 V, I-D = 3.0 A)
■Avalanche capability ratings
■Surface mount package available
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Datasheet |
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Please see the document for details |
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TO-263 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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44 KB |
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