2SK3482 MOS Field Effect Transistor
■Super low on-state resistance:
▲R-DS(on)1 = 33m MAX. (V-GS = 10 V, I-D = 18A)
▲R-DS(on)2= 39 m MAX. (V-GS = 4.5 V, I-D = 18A)
■Low Ciss: Ciss = 3600 pF TYP.
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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46 KB |
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