2SK3430 MOS Field Effect Transistor
■Super low on-state resistance:
▲R-DS(on)1 = 7.3 mΩ MAX. (V-GS= 10 V, I-D = 40 A)
▲R-DS(on)2 = 15 mΩ MAX. (V-GS = 4 V, I-D = 40 A)
■Low Ciss: Ciss = 2800 pF TYP.
■Built-in gate protection diode
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Datasheet |
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Please see the document for details |
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TO-263 |
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English Chinese Chinese and English Japanese |
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2020/2/24 |
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45 KB |
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