BTP6005 Bipolar PNP Bare Die
■The BTP6005 is a silicon BJT transistor available in bare die form and well suited for use in general purpose switching and amplifier applications. NPN complement is BTN6005
●Key Parameters:
■VCBO = -40V
■VCEO = -32V
■VEBO = -5V
■hFE = 68-400 @ VCE = -3V, IC = -0.1A
■VCE(Sat) = -0.4V @ IC = -0.5A, IB = -50mA
■fT = 100 MHz @ VCE = -5V, IE = 0A
■COBO = 25pF @ VCB = -10V
●Features
■High VEBO. Designed to provide performance equivalent to ROHM 2SA934
●Die Size (Unsawn)
■650μm X 650μm, 26 Mils X 26 Mils
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[ general purpose switching applications ][ general purpose amplifier applications ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2018/2/4 |
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122 KB |
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