GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz
●General Description
■The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E).
●Features
■Noise Figure: 0.75 dB
■Gain: 19 dB
■OIP3: 36 dBm
■Single Supply: +3V to +5V
■50 Ohm Matched Input/Output
■16 Lead 3x3mm SMT Package: 9 mm²
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GaAs SMT pHEMT LOW NOISE AMPLIFIER 、 GaAs pHEMT MMIC Low Noise Amplifier |
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[ BTS ][ Infrastructure ][ Repeaters ][ Femto Cells ][ Public Safety Radios ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/11/29 |
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v00.1014 |
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1 MB |
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