CHA8012-99F C Band High Power Amplifier GaAs Monolithic Microwave IC

2019-08-16
CHA8012-99F is a monolithic two-stage
GaAs High Power Amplifier (HPA) designed
for C band applications. The HPA provides
typically 12W of output power on the 5.2 to
6.0GHz frequency band associated with 43%
of power added efficiency at 3dB gain
compression. The small signal gain is 22dB.
The overall power supply is of 8V/2.1A.
The circuit is dedicated to defense and space
applications and is also well suited for a wide
range of microwave and millimeter wave
applications and systems.
This device is manufactured using 0.25µm
Power pHEMT process, including via holes
through the substrate and air bridges. It is
available in chip form.

UMS

CHA8012-99FCHA8012-99F/00

More

Part#

C Band GaAs High Power Amplifier

More

a wide range of microwave and millimeter wave applications and systems ]

More

Datasheet

More

ESD 、 REACh 、 RoHS

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

28,Nov,13

DSCHA80123332

722 KB

- The full preview is over. If you want to read the whole 8 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: