CHA7060-QAB 5.6-8.5GHz Power Amplifier:GaN Monolithic Microwave IC in SMD leadless package
■The CHA7060-QABis a two stages monolithic GaN High Power Amplifier, reaching 12Watt output power over 6-9GHz bandwidth.
■It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM).
■The circuit is based on GaN technology; 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC).
■It is a low cost plastic packaged designed for Point To Point Radio applications. It is supplied in RoHS compliant SMD package.
|
two stages monolithic GaN High Power Amplifier 、 GaN Monolithic Microwave IC |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
SMD |
|
|
English Chinese Chinese and English Japanese |
|
|
2021/12/24 |
|
|
|
|
|
DSCHA7060-QAB13257 |
|
|
1.5 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
