Reliability Qualification Report for AS4C32M16SB-7BIN (32M x 16 SDR SDRAMwith Pb/Halogen Free)
■In order to meet the most stringent market demands for high quality and reliability semiconductor components, Alliance maintains a strict reliability program in all products. The purpose of this report is to give an overview of the reliability status of AS4C32M16SB-7BIN. Accelerated tests are performed on product, and then the results are extrapolated to standard operating conditions in order to calculate and estimate the component’s failure rate.
●PRODUCT INFORMATION
■The AS4C32M16SB-7BIN is a 32M*16 bits high-speed CMOS Single Data Rate Synchronous Dynamic Random Access Memory (SDR SDRAM) operating from a single 3.0 to 3.6 Volt power supply. By employing some new CMOS circuit design technologies and the advanced DRAM process technologies, the AS4C32M16SB-7BIN is well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. The AS4C32M16SB-7BIN is packaged in a standard 54ball, plastic 8x8mm BGA.
●CONCLUSION
■Reliability test is to ensure the ability of a product in order to perform a re-quired function under specific conditions for a certain period of time. Through those tests, the devices of potential failure can be screened out before shipping to the customer. At the same time, the test results are fed back to process, design and other related departments for improving product quality and reliability.
■According to the life time test data, the short term 12Hrs failure rate (= the normal operation 0-1 year) of AS4C32M16SB-7BIN is equal to 0 DPM at Ta=55°C and Vcc=3.3V with 60% confidence level AND the long-term 1000Hrs failure rate (= the normal operation 1-10 year) of AS4C32M16SB-7BIN is equal to 30 FIT at Ta=55°C and Vcc=3.3V with 60% confidence level. The results of environmental test, ESD test and latch-up test also ensure that the AS4C32M16SB-7BIN is manufactured under a precise control of quality work by Alliance and its subcontractors. Thus, this experiment based on the Alliance reliability test standard for above test items can all pass.
■With the extensive research and development activities and the cooperation of all departments, Alliance continuously sets and maintains higher standard of quality and reliability to satisfy the future demand of its customers.
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SDR SDRAM 、 SDRAM 、 high-speed CMOS Single Data Rate Synchronous Dynamic Random Access Memory |
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Test Report |
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Please see the document for details |
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BGA |
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English Chinese Chinese and English Japanese |
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Dec 12, 2021 |
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781 KB |
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