AS4C32M16SB 54pin TSOPII PACKAGE - Dual Die Package (DDP)

PublishTime：2021-01-28

The 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command. The SDRAM provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications.
Features:
●Fast access time from clock: 4.5/5/5.4 ns
●Fast clock rate: 200/166/143 MHz
●Fully synchronous operation
●Internal pipelined architecture
●8M word x 16-bit x 4-bank
●Programmable Mode registers
- CAS Latency: 2 or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function
●Auto Refresh and Self Refresh
●8192 refresh cycles/64ms
●CKE power down mode
●Single +3.3V ±0.3V power supply
●Operating Temperature Range:
- Commercial: TA = 0~70°C
- Industrial: TA = -40~85°C
●Interface: LVTTL
●54-pin 400 mil plastic TSOP II package-Pb free and Halogen free
●54-ball 8x8x1.2mm(MAX) FBGA- Pb free and Halogen free

Brand of Product：	Alliance
Part#：	AS4C32M16SB 、 AS4C32M16SB-7TCN 、 AS4C32M16SB-7TIN 、 AS4C32M16SB-6TIN 、 AS4C32M16SB-7BIN 、 AS4C32M16SB6TCN 、 AS4C32M16SB6TIN 、 AS4C32M16SB6BCN 、 AS4C32M16SB6BIN 、 AS4C32M16SB7TCN 、 AS4C32M16SB7TIN 、 AS4C32M16SB7BCN 、 AS4C32M16SB7BIN More Part#
Product Category：	high-speed CMOS synchronous DRAM More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TSOPII;FBGA;BGA
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Mar.2020
Version Number：	Rev 1.2
Data Encoding：
Data Size：	2.9 MB

Data section preview(2pages)

- The full preview is over. If you want to read the whole 57 page document,please Sign in/Register -

Download

+1 Like
Add to Favorites

Recommend

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits