Automotive-grade 650 V SiC diodes Automotive-grade SiC diodes boost the performance of power converters

2022-07-27

■SiC diodes are high-performance power Schottky rectifiers that feature a silicon-carbide substrate. This wide bandgap material enables the design of high-voltage Schottky diodes, and ST offers 650 V Rectifiers for the automotive world. They present negligible reverse recovery at turn-off and minimal capacitive turn-off behavior which is independent of temperature.The very low VF series of 650 V Rectifiers offers the lowest forward voltage drop on the market for optimal efficiency.
■KEY FEATURES
●100% Automotive-grade
●AEC-Q101 qualified
●PPAP capable
●Very low forward conduction losses
●Low switching losses
●Soft switching behavior
●High forward surge capability
●Contributes to safe energy
●Allows high switching frequency
●Reduced EMI
●High T-J capability TJ(MAX) = 175 °C
●650 V guaranteed from -40 °C to +175 °C

ST

STPSC8065DYSTPSC10065DYSTPS10065GYSTPSC12065DYSTPSC12065GYSTPSC20065DYSTPSC20065GYSTPSC20065WYSTPSC40065CWY

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SiC diodeshigh-performance power Schottky rectifiers

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Please see the document for details

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English Chinese Chinese and English Japanese

November 2017

FLAECQ1011117

1.6 MB

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