STPSC806 600 V power Schottky silicon carbide diode
■Description
●The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
■Features
●No or negligible reverse recovery
●Switching behavior independent of temperature
●Particularly suitable in PFC boost diode function
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power Schottky silicon carbide diode 、 SiC diode 、 ultrahigh performance power Schottky diode |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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03-Nov-2010 |
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Rev 3 |
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16286 |
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274 KB |
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