STPSC8065 650 V power Schottky silicon carbide diode
■Description
●The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
■Features
●No or negligible reverse recovery
●Switching behavior independent of temperature
●Dedicated to PFC applications
●High forward surge capability
●Operating T-j from -40 °C to 175 °C
●ECOPACK®2 compliant component
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Schottky silicon carbide diode 、 SiC diode 、 ultra high performance power Schottky diode |
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[ PFC applications ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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18-Jul-2017 |
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Rev 2 |
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030730 |
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678 KB |
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