TP65H015G5WS 650V SuperGaN™ FET in TO-247 (source tab)
●The TP65H015G5WS 650V, 15 mΩ gallium nitride GaN FET is a normally-off device using Transphorm’s Gen V platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
●The Gen V SuperGaN™ platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
■Features
●JEDEC qualified GaN technology
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
▲Intrinsic lifetime tests
▲Wide gate safety margin
▲Transient over-voltage capability
●Very low Q-RR
●Reduced crossover loss
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[ Datacom ][ Broad industrial ][ PV inverter ][ Servo motor ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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July. 12, 2021 |
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Version 1.0 |
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tp65h015G5ws.1v0 |
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1.7 MB |
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