TP65H050WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab)
●The TP65H050WS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
●Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
■Features
●AEC-Q101 qualified GaN technology
●Junction temperature rating of 175C
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
▲Intrinsic lifetime tests
▲Wide gate safety margin
▲Transient over-voltage capability
●Very low Q-RR
●Reduced crossover loss
●RoHS compliant and Halogen-free packaging
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[ Datacom ][ Broad industrial ][ PV inverter ][ Automotive ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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March 1, 2021 |
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Version 3 |
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tp65h050wsqa.3 |
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1 MB |
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