GS66504B Bottom-side cooled 650 V E-mode GaN transistor Datasheet
■The GS66504B is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS66504B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
●Features:
■650 V enhancement mode power transistor
■Bottom-side cooled configuration
■R-DS(on) = 100 mΩ
■I-DS(max) = 15 A
■Ultra-low FOM die
■Low inductance GaNPX® package
■Simple gate drive requirements (0 V to 6 V)
■Transient tolerant gate drive (-20 V / +10 V)
■Very high switching frequency (> 10 MHz)
■Fast and controllable fall and rise times
■Reverse current capability
■Zero reverse recovery loss
■Small 5.0 x 6.6 mm² PCB footprint
■RoHS3 (6 + 4) compliant
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E-mode GaN transistor 、 enhancement mode GaN-on-silicon power transistor |
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[ AC-DC Converters ][ DC-DC converters ][ Uninterruptable Power Supplies ][ Industrial Motor Drives ][ Appliance Motor Drives ][ Fast Battery Charging ][ Class D Audio amplifiers ][ Power Adapters ][ Wireless Power Transfer ] |
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Datasheet |
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Please see the document for details |
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GaNPX® Bottom-Side Cooled |
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English Chinese Chinese and English Japanese |
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200402 |
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Rev 200402 |
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969 KB |
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