UTT15N10M-Q 15A,100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET
▲The UTC UTT15N10M-Q is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.
▲The UTC UTT15N10M-Q is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
■FEATURES
▲R-DS(ON)≤175mΩ@ V-GS=10V,I-D=8.0A
▲R-DS(ON)≤203mΩ@ V-GS=4.5V,I-D=8.0A
▲High Cell Density Trench Technology
▲High Power and Current Handling Capability
|
UTT15N10M-Q 、 UTT15N10MG-TA3-T 、 UTT15N10MG-TF1-T 、 UTT15N10ML-TF1-T 、 UTT15N10ML-TF2-T 、 UTT15N10MG-TF2-T 、 UTT15N10MG-TF3-T 、 UTT15N10ML-TF3-T 、 UTT15N10MG-TM3-T 、 UTT15N10ML-TM3-T 、 UTT15N10MG-TN3-R 、 UTT15N10ML-TN3-R 、 UTT15N10ML-TA3-T |
|
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-220F1;TO-220F2;TO-220F;TO-220;TO-251;TO-252 |
|
|
English Chinese Chinese and English Japanese |
|
|
2020/03/24 |
|
|
|
|
|
QW-R209-259.D |
|
|
381 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
