UTT15N10M-Q 15A, 100V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET
● DESCRIPTION:
■ The UTC UTT15N10M-Q is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology. The UTC UTT15N10M-Q is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.
● FEATURES:
■ R-DS(ON) ≤ 175 mΩ @ V-GS =10V, I-D =8.0A; R-DS(ON) ≤ 203 mΩ @ V-GS =4.5V, I-D =8.0A
■ High Cell Density Trench Technology
■ High Power and Current Handling Capability
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POWER MOSFET 、 N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET |
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[ SMPS ][ UPS ][ hard switched ][ high frequency circuits ] |
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Datasheet |
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Please see the document for details |
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TO-252 |
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English Chinese Chinese and English Japanese |
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2019/06/26 |
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QW-R209-259.C |
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655 KB |
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