HM18DN03Q Dual N-Channel Enhancement Mode MOSFET
●The HM18DN03Q uses advanced trench technology to provide excellent R-DS(ON) and low gate charge.This device is suitable for use as a load switch or in PWM applications.
■GENERAL FEATURES
●Channel 1,R-DS(ON)<17.5mΩ @V-GS=4.5V
●R-DS(ON)<10.8mΩ @V-GS=10V
●Channel 2,R-DS(ON)<16mΩ @V-GS=4.5V,R-DS(ON)<10mΩ @V-GS=10V
●High Power and current handling capability
●ESD protection
●Lead free product is available
●Surface Mount Package
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[ PWM ][ Load switch ][ Power management ] |
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Datasheet |
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Please see the document for details |
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DFN3×3E_EP2 |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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1013 KB |
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